Domain structure study of SrBi 2 Ta 2 O 9 ferroelectric thin films by scanning capacitance microscopy

Ching Chich Leu; Chih Yuan Chen; Chao-Hsin Chien; Mao Nan Chang; Fan Yi Hsu; Chen Ti Hu

doi:10.1063/1.1576308

Domain structure study of SrBi ₂ Ta ₂ O ₉ ferroelectric thin films by scanning capacitance microscopy

Ching Chich Leu^*, Chih Yuan Chen, Chao-Hsin Chien, Mao Nan Chang, Fan Yi Hsu, Chen Ti Hu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

The domain structure study of SrBi ₂ Ta ₂ O ₉ ferroelectric thin films using scanning capacitance microscopy was presented. A sharp image contrast was found to be induced between the nanosized domains owing to the various polarities. The analysis showed that the reversal polarization process of a ferroelectric domain was found to be much easier inside a large grain than in a small grain.

Original language	English
Pages (from-to)	3493-3495
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	20
DOIs	https://doi.org/10.1063/1.1576308
State	Published - 19 May 2003

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abstract = " The domain structure study of SrBi 2 Ta 2 O 9 ferroelectric thin films using scanning capacitance microscopy was presented. A sharp image contrast was found to be induced between the nanosized domains owing to the various polarities. The analysis showed that the reversal polarization process of a ferroelectric domain was found to be much easier inside a large grain than in a small grain. ",

author = "Leu, {Ching Chich} and Chen, {Chih Yuan} and Chao-Hsin Chien and Chang, {Mao Nan} and Hsu, {Fan Yi} and Hu, {Chen Ti}",

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AU - Leu, Ching Chich

AU - Chen, Chih Yuan

AU - Chien, Chao-Hsin

AU - Chang, Mao Nan

AU - Hsu, Fan Yi

AU - Hu, Chen Ti

PY - 2003/5/19

Y1 - 2003/5/19

N2 - The domain structure study of SrBi 2 Ta 2 O 9 ferroelectric thin films using scanning capacitance microscopy was presented. A sharp image contrast was found to be induced between the nanosized domains owing to the various polarities. The analysis showed that the reversal polarization process of a ferroelectric domain was found to be much easier inside a large grain than in a small grain.

AB - The domain structure study of SrBi 2 Ta 2 O 9 ferroelectric thin films using scanning capacitance microscopy was presented. A sharp image contrast was found to be induced between the nanosized domains owing to the various polarities. The analysis showed that the reversal polarization process of a ferroelectric domain was found to be much easier inside a large grain than in a small grain.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Domain structure study of SrBi ₂ Ta ₂ O ₉ ferroelectric thin films by scanning capacitance microscopy

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