Abstract
We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple MgxNy/GaN nucleation layers. With multiple MgxNy/GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple MgxNy/GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (ΦB) increased from 1.07 to 1.15 eV with the insertion of the multiple MgxNy/GaN nucleation layers.
Original language | English |
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Pages (from-to) | 2839-2842 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 518 |
Issue number | 10 |
DOIs | |
State | Published - 1 Mar 2010 |
Keywords
- Atomic Force Microscopy
- Electrical properties and measurements
- MgN/GaN
- Nitrides
- Nucleation layers
- Schottky diodes
- Secondary-Ion Mass Spectroscopy
- X-ray diffraction