Dislocation reduction in GaN with multiple Mgx Ny GaN buffer layers by metal organic chemical vapor deposition

C. J. Tun*, Cheng-Huang Kuo, Y. K. Fu, C. W. Kuo, C. J. Pan, G. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple Mgx Ny GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple Mgx Ny GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple Mgx Ny GaN buffer layers reveals an asymmetrical reflection (102) with a small full width at half maximum, and a higher mobility, lower background concentration, and lower etching pit density than the GaN with the LT GaN buffer layer.

Original languageEnglish
Article number212109
JournalApplied Physics Letters
Volume90
Issue number21
DOIs
StatePublished - 1 Jun 2007

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