TY - JOUR
T1 - Dislocation annihilation in GaN with multiple MgxN y/GaN buffer layers by metal organic chemical vapor deposition
AU - Fu, Y. K.
AU - Tun, C. J.
AU - Kuo, Cheng-Huang
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Unintentionally doped GaN epitaxial layers with a conventional single low-temperature (LT) GaN buffer layer and with multiple MgxN y/GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). X-ray Photoelectron Spectroscopy (XPS) result reveals Mg 2p core-level spectra from the 12 pairs of Mg xNy/GaN buffer layers. The multiple MgxN y/GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple MgxNy/GaN buffer layers reveals an asymmetrical reflection (102) with a small full-width at half-maximum (FWHM), and a higher mobility, lower background concentration and lower etching pit density (EPD) than the GaN with the LT GaN buffer layer.
AB - Unintentionally doped GaN epitaxial layers with a conventional single low-temperature (LT) GaN buffer layer and with multiple MgxN y/GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). X-ray Photoelectron Spectroscopy (XPS) result reveals Mg 2p core-level spectra from the 12 pairs of Mg xNy/GaN buffer layers. The multiple MgxN y/GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple MgxNy/GaN buffer layers reveals an asymmetrical reflection (102) with a small full-width at half-maximum (FWHM), and a higher mobility, lower background concentration and lower etching pit density (EPD) than the GaN with the LT GaN buffer layer.
UR - http://www.scopus.com/inward/record.url?scp=77951227919&partnerID=8YFLogxK
U2 - 10.1002/pssc.200778419
DO - 10.1002/pssc.200778419
M3 - Conference article
AN - SCOPUS:77951227919
SN - 1862-6351
VL - 5
SP - 1499
EP - 1501
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 6
T2 - 7th International Conference of Nitride Semiconductors, ICNS-7
Y2 - 16 September 2007 through 21 September 2007
ER -