Direct patterning on low dielectric constant materials with electron beam lithography

Ben Chang Chen, Yee Kai Lai, Fu-Hsiang Ko, Cheng Tung Chou, Hsuen Li Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Summary form only given. Electron beam (EB) lithography and direct patterning of low-dielectric-constant (low-k) materials are two crucial issues of nanofabrication technologies. In this paper, we propose direct patterning of negative tone hydrogen silsesquioxane (HSQ) film of which can replace the use of resist processes including resist coating and stripping.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages168-169
Number of pages2
ISBN (Electronic)4891140178, 9784891140175
DOIs
StatePublished - 1 Jan 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: 31 Oct 20012 Nov 2001

Publication series

Name2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2001
Country/TerritoryJapan
CityShimane
Period31/10/012/11/01

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