Abstract
Large grain polycrystalline silicon (poly-Si) films on glass substrates have been deposited on an aluminum-induced crystallization (AIC) seed layer using hot-wire chemical vapor deposition (HWCVD). A poly-Si seed layer was first formed by the AIC process and a thicker poly-Si film was subsequently deposited upon the seed layer using HWCVD. The effects of AIC annealing parameters on the structural and electrical properties of the poly-Si seed layers were characterized by Raman scattering spectroscopy, field-emission scanning electron microscopy, and Hall measurements. It was found that the crystallinity of seed layer was enhanced with increasing the annealing duration and temperature. The poly-Si seed layer formed at optimum annealing parameters can reach a grain size of 700 nm, hole concentration of 3.5 × 10 18 cm - 3, and Hall mobility of 22 cm 2/Vs. After forming the seed layer, poly-Si films with good crystalline quality and high growth rate (> 1 nm/s) can be obtained using HWCVD. These results indicated that the HWCVD-deposited poly-Si film on an AIC seed layer could be a promising candidate for thin-film Si photovoltaic applications.
Original language | English |
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Pages (from-to) | 5860-5866 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 520 |
Issue number | 18 |
DOIs | |
State | Published - 1 Jul 2012 |
Keywords
- Aluminum-induced crystallization
- Electron microscopy
- Grain size
- Hot-wire chemical vapor deposition
- Polycrystalline Si
- Raman spectroscopy
- Seed layer