Direct experimental evidence of the hole capture by resonant levels in boron doped silicon

Shun-Tung Yen*, V. Tulupenko, E. S. Cheng, A. Dalakyan, C. P. Lee, K. A. Chao, V. Belykh, A. Abramov, V. Ryzhkov

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The variation of hole population for the localized and resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved spectroscopy. The capture of holes by resonant levels is verified. A new spectral line earlier theoretically predicted was experimentally observed for the first time.

    Original languageEnglish
    Title of host publicationPHYSICS OF SEMICONDUCTORS
    Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
    Pages1192-1193
    Number of pages2
    DOIs
    StatePublished - 30 Jun 2005
    EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
    Duration: 26 Jul 200430 Jul 2004

    Publication series

    NameAIP Conference Proceedings
    Volume772
    ISSN (Print)0094-243X
    ISSN (Electronic)1551-7616

    Conference

    ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
    Country/TerritoryUnited States
    CityFlagstaff, AZ
    Period26/07/0430/07/04

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