Direct determination of interface and bulk traps in stacked HfO2 dielectrics using charge pumping method

Tuo-Hung Hou; M. F. Wang; K. L. Mai; Y. M. Lin; M. H. Yang; L. G. Yao; Y. Jin; S. C. Chen; M. S. Liang

doi:10.1109/RELPHY.2004.1315399

Direct determination of interface and bulk traps in stacked HfO₂ dielectrics using charge pumping method

Tuo-Hung Hou, M. F. Wang, K. L. Mai, Y. M. Lin, M. H. Yang, L. G. Yao, Y. Jin, S. C. Chen, M. S. Liang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

For the first time, trap density at SiO₂/Si interface, HfO₂/SiO₂ interface, and HfO₂ bulk of stacked HfO₂/SiO₂ dielectrics are quantified respectively with a simple charge pumping method. It was found that the amount of each individual type of traps can be well correlated to specific process conditions as well as device performance, which makes such innovative characterization method very powerful for process optimization of high-k dielectrics.

Original language	English
Title of host publication	2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	581-582
Number of pages	2
Volume	2004-January
Edition	January
ISBN (Electronic)	078038315X
DOIs	https://doi.org/10.1109/RELPHY.2004.1315399
State	Published - 12 Jul 2004
Event	2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States Duration: 25 Apr 2004 → 29 Apr 2004

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Number	January
Volume	2004-January
ISSN (Print)	1541-7026

Conference

Conference	2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual
Country/Territory	United States
City	Phoenix, AZ.
Period	25/04/04 → 29/04/04

Access to Document

10.1109/RELPHY.2004.1315399

Cite this

Hou, T-H., Wang, M. F., Mai, K. L., Lin, Y. M., Yang, M. H., Yao, L. G., Jin, Y., Chen, S. C., & Liang, M. S. (2004). Direct determination of interface and bulk traps in stacked HfO₂ dielectrics using charge pumping method. In 2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004 (January ed., Vol. 2004-January, pp. 581-582). Article 1315399 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2004-January, No. January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2004.1315399

Hou, Tuo-Hung ; Wang, M. F. ; Mai, K. L. et al. / Direct determination of interface and bulk traps in stacked HfO₂ dielectrics using charge pumping method. 2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004. Vol. 2004-January January. ed. Institute of Electrical and Electronics Engineers Inc., 2004. pp. 581-582 (IEEE International Reliability Physics Symposium Proceedings; January).

@inproceedings{13a707cf0b6847febd73c4a926c0009b,

title = "Direct determination of interface and bulk traps in stacked HfO2 dielectrics using charge pumping method",

abstract = "For the first time, trap density at SiO2/Si interface, HfO2/SiO2 interface, and HfO2 bulk of stacked HfO2/SiO2 dielectrics are quantified respectively with a simple charge pumping method. It was found that the amount of each individual type of traps can be well correlated to specific process conditions as well as device performance, which makes such innovative characterization method very powerful for process optimization of high-k dielectrics.",

author = "Tuo-Hung Hou and Wang, {M. F.} and Mai, {K. L.} and Lin, {Y. M.} and Yang, {M. H.} and Yao, {L. G.} and Y. Jin and Chen, {S. C.} and Liang, {M. S.}",

year = "2004",

month = jul,

day = "12",

doi = "10.1109/RELPHY.2004.1315399",

language = "English",

volume = "2004-January",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "January",

pages = "581--582",

booktitle = "2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004",

address = "United States",

edition = "January",

note = "2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual ; Conference date: 25-04-2004 Through 29-04-2004",

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Hou, T-H, Wang, MF, Mai, KL, Lin, YM, Yang, MH, Yao, LG, Jin, Y, Chen, SC & Liang, MS 2004, Direct determination of interface and bulk traps in stacked HfO₂ dielectrics using charge pumping method. in 2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004. January edn, vol. 2004-January, 1315399, IEEE International Reliability Physics Symposium Proceedings, no. January, vol. 2004-January, Institute of Electrical and Electronics Engineers Inc., pp. 581-582, 2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual, Phoenix, AZ., United States, 25/04/04. https://doi.org/10.1109/RELPHY.2004.1315399

Direct determination of interface and bulk traps in stacked HfO₂ dielectrics using charge pumping method. / Hou, Tuo-Hung; Wang, M. F.; Mai, K. L. et al.
2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004. Vol. 2004-January January. ed. Institute of Electrical and Electronics Engineers Inc., 2004. p. 581-582 1315399 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2004-January, No. January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - For the first time, trap density at SiO2/Si interface, HfO2/SiO2 interface, and HfO2 bulk of stacked HfO2/SiO2 dielectrics are quantified respectively with a simple charge pumping method. It was found that the amount of each individual type of traps can be well correlated to specific process conditions as well as device performance, which makes such innovative characterization method very powerful for process optimization of high-k dielectrics.

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Hou T-H, Wang MF, Mai KL, Lin YM, Yang MH, Yao LG et al. Direct determination of interface and bulk traps in stacked HfO₂ dielectrics using charge pumping method. In 2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004. January ed. Vol. 2004-January. Institute of Electrical and Electronics Engineers Inc. 2004. p. 581-582. 1315399. (IEEE International Reliability Physics Symposium Proceedings; January). doi: 10.1109/RELPHY.2004.1315399