TY - JOUR
T1 - Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection
AU - Chen, Wen Yi
AU - Rosenbaum, Elyse
AU - Ker, Ming-Dou
PY - 2012/3/1
Y1 - 2012/3/1
N2 - Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.
AB - Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.
KW - Charge device model (CDM)
KW - electrostatic discharge (ESD)
KW - silicon-controlled rectifier (SCR)
UR - http://www.scopus.com/inward/record.url?scp=84863235295&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2011.2171487
DO - 10.1109/TDMR.2011.2171487
M3 - Article
AN - SCOPUS:84863235295
SN - 1530-4388
VL - 12
SP - 10
EP - 14
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 1
M1 - 6163575
ER -