Diode-pumped passively mode-locked 1342 nm Nd: YVO4 laser with an AlGaInAs quantum-well saturable absorber

S. C. Huang; H. L. Cheng; Yi Fan Chen; Kuan-Wei Su; Yung-Fu Chen; Kai-Feng Huang

doi:10.1364/OL.34.002348

Diode-pumped passively mode-locked 1342 nm Nd: YVO₄ laser with an AlGaInAs quantum-well saturable absorber

S. C. Huang, H. L. Cheng, Yi Fan Chen, Kuan-Wei Su, Yung-Fu Chen, Kai-Feng Huang

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd: YVO₄ laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.

Original language	English
Pages (from-to)	2348-2350
Number of pages	3
Journal	Optics Letters
Volume	34
Issue number	15
DOIs	https://doi.org/10.1364/OL.34.002348
State	Published - 1 Aug 2009

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abstract = "We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd: YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.",

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T2 - YVO4 laser with an AlGaInAs quantum-well saturable absorber

AU - Huang, S. C.

AU - Cheng, H. L.

AU - Chen, Yi Fan

AU - Su, Kuan-Wei

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

PY - 2009/8/1

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N2 - We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd: YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.

AB - We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd: YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.

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ER -

Diode-pumped passively mode-locked 1342 nm Nd: YVO₄ laser with an AlGaInAs quantum-well saturable absorber

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