Dimensional effects on the reliability of polycrystalline silicon thin-film transistors

Hsiao-Wen Zan; P. S. Shih; T. C. Chang; C. Y. Chang

doi:10.1016/S0026-2714(00)00165-7

Dimensional effects on the reliability of polycrystalline silicon thin-film transistors

Hsiao-Wen Zan^*, P. S. Shih, T. C. Chang, C. Y. Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Original language	English
Pages (from-to)	1479-1483
Number of pages	5
Journal	Microelectronics Reliability
Volume	40
Issue number	8-10
DOIs	https://doi.org/10.1016/S0026-2714(00)00165-7
State	Published - 1 Jan 2000

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title = "Dimensional effects on the reliability of polycrystalline silicon thin-film transistors",

author = "Hsiao-Wen Zan and Shih, {P. S.} and Chang, {T. C.} and Chang, {C. Y.}",

year = "2000",

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language = "English",

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AU - Zan, Hsiao-Wen

AU - Shih, P. S.

AU - Chang, T. C.

AU - Chang, C. Y.

PY - 2000/1/1

Y1 - 2000/1/1

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U2 - 10.1016/S0026-2714(00)00165-7

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M3 - Article

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SP - 1479

EP - 1483

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8-10

ER -

Dimensional effects on the reliability of polycrystalline silicon thin-film transistors

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