Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs

Ryunosuke Katada; Katsuhiro Hata; Yoshitaka Yamauchi; Ting Wei Wang; Ryuzo Morikawa; Cheng Hsuan Wu; Toru Sai; Po Hung Chen; Makoto Takamiya

doi:10.1109/ECCE47101.2021.9595264

Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs

Ryunosuke Katada, Katsuhiro Hata, Yoshitaka Yamauchi, Ting Wei Wang, Ryuzo Morikawa, Cheng Hsuan Wu, Toru Sai, Po Hung Chen, Makoto Takamiya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this paper, a problem of huge voltage overshoots (V OVERSHOOT ) of VDS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution to avoid the problem is proposed. The highest V OVERSHOOT in 165k measurements, where parameters of 6-bit DGD IC in 6 time slots in 3.3-ns time intervals are randomly changed in the turn-off of GaN FET at 20 V and 10 A, is 27.6 V, which is 115% larger than the conventional single-step gate driving (CSG) and is almost equal to the maximum rated voltage of the GaNFET. To solve the problem, a safe and fast search method of optimum parameters for DGD is proposed, which achieved 61% reduction of the switching loss and 59% reduction of V OVERSHOOT compared with CSG.

Original language	English
Title of host publication	2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5412-5416
Number of pages	5
ISBN (Electronic)	9781728151359
DOIs	https://doi.org/10.1109/ECCE47101.2021.9595264
State	Published - 2021
Event	13th IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Virtual, Online, Canada Duration: 10 Oct 2021 → 14 Oct 2021

Publication series

Name	2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings

Conference

Conference	13th IEEE Energy Conversion Congress and Exposition, ECCE 2021
Country/Territory	Canada
City	Virtual, Online
Period	10/10/21 → 14/10/21

Keywords

digital gate drive
GaN FET
overshoot
switching loss

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ECCE47101.2021.9595264

Cite this

Katada, R., Hata, K., Yamauchi, Y., Wang, T. W., Morikawa, R., Wu, C. H., Sai, T., Chen, P. H., & Takamiya, M. (2021). Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs. In 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings (pp. 5412-5416). (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE47101.2021.9595264

Katada, Ryunosuke ; Hata, Katsuhiro ; Yamauchi, Yoshitaka et al. / Digital Gate Driving (DGD) is Double-Edged Sword : How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs. 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 5412-5416 (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings).

@inproceedings{de77c89db3774b46955b6e99def7e947,

title = "Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs",

abstract = "In this paper, a problem of huge voltage overshoots (V OVERSHOOT ) of VDS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution to avoid the problem is proposed. The highest V OVERSHOOT in 165k measurements, where parameters of 6-bit DGD IC in 6 time slots in 3.3-ns time intervals are randomly changed in the turn-off of GaN FET at 20 V and 10 A, is 27.6 V, which is 115% larger than the conventional single-step gate driving (CSG) and is almost equal to the maximum rated voltage of the GaNFET. To solve the problem, a safe and fast search method of optimum parameters for DGD is proposed, which achieved 61% reduction of the switching loss and 59% reduction of V OVERSHOOT compared with CSG. ",

keywords = "digital gate drive, GaN FET, overshoot, switching loss",

author = "Ryunosuke Katada and Katsuhiro Hata and Yoshitaka Yamauchi and Wang, {Ting Wei} and Ryuzo Morikawa and Wu, {Cheng Hsuan} and Toru Sai and Chen, {Po Hung} and Makoto Takamiya",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; null ; Conference date: 10-10-2021 Through 14-10-2021",

year = "2021",

doi = "10.1109/ECCE47101.2021.9595264",

language = "English",

series = "2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "5412--5416",

booktitle = "2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings",

address = "United States",

}

Katada, R, Hata, K, Yamauchi, Y, Wang, TW, Morikawa, R, Wu, CH, Sai, T, Chen, PH & Takamiya, M 2021, Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs. in 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings. 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 5412-5416, 13th IEEE Energy Conversion Congress and Exposition, ECCE 2021, Virtual, Online, Canada, 10/10/21. https://doi.org/10.1109/ECCE47101.2021.9595264

Digital Gate Driving (DGD) is Double-Edged Sword : How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs. / Katada, Ryunosuke; Hata, Katsuhiro; Yamauchi, Yoshitaka et al.

2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. p. 5412-5416 (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Digital Gate Driving (DGD) is Double-Edged Sword

AU - Katada, Ryunosuke

AU - Hata, Katsuhiro

AU - Yamauchi, Yoshitaka

AU - Wang, Ting Wei

AU - Morikawa, Ryuzo

AU - Wu, Cheng Hsuan

AU - Sai, Toru

AU - Chen, Po Hung

AU - Takamiya, Makoto

PY - 2021

Y1 - 2021

N2 - In this paper, a problem of huge voltage overshoots (V OVERSHOOT ) of VDS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution to avoid the problem is proposed. The highest V OVERSHOOT in 165k measurements, where parameters of 6-bit DGD IC in 6 time slots in 3.3-ns time intervals are randomly changed in the turn-off of GaN FET at 20 V and 10 A, is 27.6 V, which is 115% larger than the conventional single-step gate driving (CSG) and is almost equal to the maximum rated voltage of the GaNFET. To solve the problem, a safe and fast search method of optimum parameters for DGD is proposed, which achieved 61% reduction of the switching loss and 59% reduction of V OVERSHOOT compared with CSG.

AB - In this paper, a problem of huge voltage overshoots (V OVERSHOOT ) of VDS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution to avoid the problem is proposed. The highest V OVERSHOOT in 165k measurements, where parameters of 6-bit DGD IC in 6 time slots in 3.3-ns time intervals are randomly changed in the turn-off of GaN FET at 20 V and 10 A, is 27.6 V, which is 115% larger than the conventional single-step gate driving (CSG) and is almost equal to the maximum rated voltage of the GaNFET. To solve the problem, a safe and fast search method of optimum parameters for DGD is proposed, which achieved 61% reduction of the switching loss and 59% reduction of V OVERSHOOT compared with CSG.

KW - digital gate drive

KW - GaN FET

KW - overshoot

KW - switching loss

UR - http://www.scopus.com/inward/record.url?scp=85123385201&partnerID=8YFLogxK

U2 - 10.1109/ECCE47101.2021.9595264

DO - 10.1109/ECCE47101.2021.9595264

M3 - Conference contribution

AN - SCOPUS:85123385201

T3 - 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings

SP - 5412

EP - 5416

BT - 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 10 October 2021 through 14 October 2021

ER -

Katada R, Hata K, Yamauchi Y, Wang TW, Morikawa R, Wu CH et al. Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs. In 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. p. 5412-5416. (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings). doi: 10.1109/ECCE47101.2021.9595264

Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs

Abstract

Publication series

Conference

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this