Diffusion limiting layer induced tantalum oxide based memristor as nociceptor

Debashis Panda; Yu Fong Hui; Tseung Yuen Tseng

doi:10.1016/j.mtelec.2023.100031

Diffusion limiting layer induced tantalum oxide based memristor as nociceptor

Debashis Panda^*, Yu Fong Hui, Tseung Yuen Tseng

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The nociceptor is critical to developed the new generation human-like robots. It is a special sensory receptor that detects noxious stimuli and responds accordingly. This report demonstrates a novel TaN/Ta/TaO_x/Al₂O₃/ITO/glass memristor as a nociceptor. The device shows bipolar switching with a positive set and a negative reset. High-resolution transmission microscopy observation confirms the presence of the ultrathin Al₂O₃ layer and the clear interface between oxides and electrodes. The experimental results measured through electric pulses confirm the key features of nociceptors such as threshold, relaxation, allodynia and hyperalgesia properties. The memristor is relaxed after 10 ms at 0.1 V. These nociceptive properties confirm that the TaO_x-based memristors can be potentially used as electronic nociceptors.

Original language	English
Article number	100031
Journal	Materials Today Electronics
Volume	3
DOIs	https://doi.org/10.1016/j.mtelec.2023.100031
State	Published - May 2023

Keywords

All oxide devices
Memristor
Nociceptor
invisible devices

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10.1016/j.mtelec.2023.100031

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title = "Diffusion limiting layer induced tantalum oxide based memristor as nociceptor",

abstract = "The nociceptor is critical to developed the new generation human-like robots. It is a special sensory receptor that detects noxious stimuli and responds accordingly. This report demonstrates a novel TaN/Ta/TaOx/Al2O3/ITO/glass memristor as a nociceptor. The device shows bipolar switching with a positive set and a negative reset. High-resolution transmission microscopy observation confirms the presence of the ultrathin Al2O3 layer and the clear interface between oxides and electrodes. The experimental results measured through electric pulses confirm the key features of nociceptors such as threshold, relaxation, allodynia and hyperalgesia properties. The memristor is relaxed after 10 ms at 0.1 V. These nociceptive properties confirm that the TaOx-based memristors can be potentially used as electronic nociceptors.",

keywords = "All oxide devices, Memristor, Nociceptor, invisible devices",

author = "Debashis Panda and Hui, {Yu Fong} and Tseng, {Tseung Yuen}",

note = "Publisher Copyright: {\textcopyright} 2023 The Author(s)",

year = "2023",

month = may,

doi = "10.1016/j.mtelec.2023.100031",

language = "English",

volume = "3",

journal = "Materials Today Electronics",

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T1 - Diffusion limiting layer induced tantalum oxide based memristor as nociceptor

AU - Panda, Debashis

AU - Hui, Yu Fong

AU - Tseng, Tseung Yuen

PY - 2023/5

Y1 - 2023/5

N2 - The nociceptor is critical to developed the new generation human-like robots. It is a special sensory receptor that detects noxious stimuli and responds accordingly. This report demonstrates a novel TaN/Ta/TaOx/Al2O3/ITO/glass memristor as a nociceptor. The device shows bipolar switching with a positive set and a negative reset. High-resolution transmission microscopy observation confirms the presence of the ultrathin Al2O3 layer and the clear interface between oxides and electrodes. The experimental results measured through electric pulses confirm the key features of nociceptors such as threshold, relaxation, allodynia and hyperalgesia properties. The memristor is relaxed after 10 ms at 0.1 V. These nociceptive properties confirm that the TaOx-based memristors can be potentially used as electronic nociceptors.

AB - The nociceptor is critical to developed the new generation human-like robots. It is a special sensory receptor that detects noxious stimuli and responds accordingly. This report demonstrates a novel TaN/Ta/TaOx/Al2O3/ITO/glass memristor as a nociceptor. The device shows bipolar switching with a positive set and a negative reset. High-resolution transmission microscopy observation confirms the presence of the ultrathin Al2O3 layer and the clear interface between oxides and electrodes. The experimental results measured through electric pulses confirm the key features of nociceptors such as threshold, relaxation, allodynia and hyperalgesia properties. The memristor is relaxed after 10 ms at 0.1 V. These nociceptive properties confirm that the TaOx-based memristors can be potentially used as electronic nociceptors.

KW - All oxide devices

KW - Memristor

KW - Nociceptor

KW - invisible devices

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U2 - 10.1016/j.mtelec.2023.100031

DO - 10.1016/j.mtelec.2023.100031

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VL - 3

JO - Materials Today Electronics

JF - Materials Today Electronics

M1 - 100031

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Diffusion limiting layer induced tantalum oxide based memristor as nociceptor

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Keywords

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