Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes

Y. S. Wang*, N. C. Chen, Jenn-Fang Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Temperature dependence of photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to investigate the recombination process in InGaN/GaN light-emitting diodes (LEDs). The results exhibited that the nonradiative recombination process can be explained by diffusion-controlled kinetic.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages1222-1224
Number of pages3
DOIs
StatePublished - 1 Dec 2011
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: 28 Aug 20111 Sep 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Country/TerritoryAustralia
CitySydney
Period28/08/111/09/11

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