Diffusion bonding of GaAs wafers for nonlinear optics applications

D. Zheng; L. A. Gordon; Yew-Chuhg Wu; R. K. Route; M. M. Fejer; R. L. Byer; R. S. Feigelson

doi:10.1149/1.1837608

Diffusion bonding of GaAs wafers for nonlinear optics applications

D. Zheng^*, L. A. Gordon, Yew-Chuhg Wu, R. K. Route, M. M. Fejer, R. L. Byer, R. S. Feigelson

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Diffusion-bonded stacked periodic structures represent a new family of optical materials with spatially patterned nonlinear properties. The bonding process preserves both the optical and mechanical properties of the bulk materials. GaAs devices up to 20 layers were diffusion bonded and characterized. Optical loss was from interfacial voids and gaps at shorter wavelengths and from processing-induced p-type free carrier absorption at longer wavelengths.

Original language	English
Pages (from-to)	1439-1441
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	144
Issue number	4
DOIs	https://doi.org/10.1149/1.1837608
State	Published - 1 Jan 1997

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10.1149/1.1837608

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abstract = "Diffusion-bonded stacked periodic structures represent a new family of optical materials with spatially patterned nonlinear properties. The bonding process preserves both the optical and mechanical properties of the bulk materials. GaAs devices up to 20 layers were diffusion bonded and characterized. Optical loss was from interfacial voids and gaps at shorter wavelengths and from processing-induced p-type free carrier absorption at longer wavelengths.",

author = "D. Zheng and Gordon, {L. A.} and Yew-Chuhg Wu and Route, {R. K.} and Fejer, {M. M.} and Byer, {R. L.} and Feigelson, {R. S.}",

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AU - Gordon, L. A.

AU - Wu, Yew-Chuhg

AU - Route, R. K.

AU - Fejer, M. M.

AU - Byer, R. L.

AU - Feigelson, R. S.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Diffusion-bonded stacked periodic structures represent a new family of optical materials with spatially patterned nonlinear properties. The bonding process preserves both the optical and mechanical properties of the bulk materials. GaAs devices up to 20 layers were diffusion bonded and characterized. Optical loss was from interfacial voids and gaps at shorter wavelengths and from processing-induced p-type free carrier absorption at longer wavelengths.

AB - Diffusion-bonded stacked periodic structures represent a new family of optical materials with spatially patterned nonlinear properties. The bonding process preserves both the optical and mechanical properties of the bulk materials. GaAs devices up to 20 layers were diffusion bonded and characterized. Optical loss was from interfacial voids and gaps at shorter wavelengths and from processing-induced p-type free carrier absorption at longer wavelengths.

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M3 - Article

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SP - 1439

EP - 1441

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ER -

Diffusion bonding of GaAs wafers for nonlinear optics applications

Abstract

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