Diffusion bonding of GaAs wafers for nonlinear optics applications

D. Zheng*, L. A. Gordon, Yew-Chuhg Wu, R. K. Route, M. M. Fejer, R. L. Byer, R. S. Feigelson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Diffusion-bonded stacked periodic structures represent a new family of optical materials with spatially patterned nonlinear properties. The bonding process preserves both the optical and mechanical properties of the bulk materials. GaAs devices up to 20 layers were diffusion bonded and characterized. Optical loss was from interfacial voids and gaps at shorter wavelengths and from processing-induced p-type free carrier absorption at longer wavelengths.

Original languageEnglish
Pages (from-to)1439-1441
Number of pages3
JournalJournal of the Electrochemical Society
Issue number4
StatePublished - 1 Jan 1997


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