Abstract
Direct patterning of nonphotosensitive low-k hydrogen silsesquioxane (HSQ) was achieved using electron beam (EB) lithography. The smallest feature size of 60 nm for damascene lines was demonstrated without using etch-stop layer, photoresist, and dry-etching technologies. The probability of low-k degradation can be thereby avoided during these pattern transfer processes. Material analysis including FTIR and TDS have confirmed the explanation, certainly indicating that relatively high intensity of Si-H bonds and low content of moisture were present in the electron-beam-exposed silicate.
Original language | English |
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Pages (from-to) | 4226-4228 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 20 |
DOIs | |
State | Published - 17 Nov 2003 |