Device models in FDTD analysis of microwave circuits

Chien-Nan Kuo; Bijan Houshmand; Tatsuo Itoh

doi:10.1109/ISSSE.1995.498033

Device models in FDTD analysis of microwave circuits

Chien-Nan Kuo^*, Bijan Houshmand, Tatsuo Itoh

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper describes the investigation of two different approaches to model microwave active devices using the finite-difference time-domain (FDTD) analysis. Norton-equivalent and Thevenin-equivalent approaches are used in the extended FDTD method to model the interaction between the three-terminal active device and the electromagnetic field by placing equivalent sources in the active region. A typical microwave amplifier is analyzed, and the simulation results agree well with expectation.

Original language	English
Pages	467-470
Number of pages	4
DOIs	https://doi.org/10.1109/ISSSE.1995.498033
State	Published - 1 Dec 1995
Event	Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95 - San Francisco, CA, USA Duration: 25 Oct 1995 → 27 Oct 1995

Conference

Conference	Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95
City	San Francisco, CA, USA
Period	25/10/95 → 27/10/95

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10.1109/ISSSE.1995.498033

Cite this

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title = "Device models in FDTD analysis of microwave circuits",

abstract = "This paper describes the investigation of two different approaches to model microwave active devices using the finite-difference time-domain (FDTD) analysis. Norton-equivalent and Thevenin-equivalent approaches are used in the extended FDTD method to model the interaction between the three-terminal active device and the electromagnetic field by placing equivalent sources in the active region. A typical microwave amplifier is analyzed, and the simulation results agree well with expectation.",

author = "Chien-Nan Kuo and Bijan Houshmand and Tatsuo Itoh",

year = "1995",

month = dec,

day = "1",

doi = "10.1109/ISSSE.1995.498033",

language = "English",

pages = "467--470",

note = "Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95 ; Conference date: 25-10-1995 Through 27-10-1995",

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T1 - Device models in FDTD analysis of microwave circuits

AU - Kuo, Chien-Nan

AU - Houshmand, Bijan

AU - Itoh, Tatsuo

PY - 1995/12/1

Y1 - 1995/12/1

N2 - This paper describes the investigation of two different approaches to model microwave active devices using the finite-difference time-domain (FDTD) analysis. Norton-equivalent and Thevenin-equivalent approaches are used in the extended FDTD method to model the interaction between the three-terminal active device and the electromagnetic field by placing equivalent sources in the active region. A typical microwave amplifier is analyzed, and the simulation results agree well with expectation.

AB - This paper describes the investigation of two different approaches to model microwave active devices using the finite-difference time-domain (FDTD) analysis. Norton-equivalent and Thevenin-equivalent approaches are used in the extended FDTD method to model the interaction between the three-terminal active device and the electromagnetic field by placing equivalent sources in the active region. A typical microwave amplifier is analyzed, and the simulation results agree well with expectation.

UR - http://www.scopus.com/inward/record.url?scp=0029514230&partnerID=8YFLogxK

U2 - 10.1109/ISSSE.1995.498033

DO - 10.1109/ISSSE.1995.498033

M3 - Paper

AN - SCOPUS:0029514230

SP - 467

EP - 470

T2 - Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95

Y2 - 25 October 1995 through 27 October 1995

ER -

Device models in FDTD analysis of microwave circuits

Abstract

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