Device isolation process for 4H-SiC CMOS ICs

Bing Yue Tsui; Ya Ru Jhuang; Jian Hao Lin; Yi Ting Huang; Te Kai Tsai; Kai Ti Hsu; Yi Han Su; Yong Fen Hsieh

doi:10.1109/EDTM53872.2022.9798380

Device isolation process for 4H-SiC CMOS ICs

Bing Yue Tsui^*, Ya Ru Jhuang, Jian Hao Lin, Yi Ting Huang, Te Kai Tsai, Kai Ti Hsu, Yi Han Su, Yong Fen Hsieh

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

SiC CMOS ICs attract more and more attention recently. Semi-recessed isolation is one of the key processes for sub-micron ICs. In this paper, LOCal Oxidation of SiC (LOCOSiC) process is reviewed. The growth process and shape control of the field oxide are discussed. The influence of LOCOSiC isolation on gate oxide reliability, junction leakage current, and isolation capability are also presented.

Original language	English
Title of host publication	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	238-240
Number of pages	3
ISBN (Electronic)	9781665421775
DOIs	https://doi.org/10.1109/EDTM53872.2022.9798380
State	Published - 2022
Event	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan Duration: 6 Mar 2022 → 9 Mar 2022

Publication series

Name	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/Territory	Japan
City	Virtual, Online
Period	6/03/22 → 9/03/22

Keywords

CMOS
ICs and Isolation
SiC

Access to Document

10.1109/EDTM53872.2022.9798380

Cite this

Tsui, B. Y., Jhuang, Y. R., Lin, J. H., Huang, Y. T., Tsai, T. K., Hsu, K. T., Su, Y. H., & Hsieh, Y. F. (2022). Device isolation process for 4H-SiC CMOS ICs. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 238-240). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9798380

@inproceedings{5d4edf8adb90434cab78dc0ba9eb956f,

title = "Device isolation process for 4H-SiC CMOS ICs",

abstract = "SiC CMOS ICs attract more and more attention recently. Semi-recessed isolation is one of the key processes for sub-micron ICs. In this paper, LOCal Oxidation of SiC (LOCOSiC) process is reviewed. The growth process and shape control of the field oxide are discussed. The influence of LOCOSiC isolation on gate oxide reliability, junction leakage current, and isolation capability are also presented.",

keywords = "CMOS, ICs and Isolation, SiC",

author = "Tsui, {Bing Yue} and Jhuang, {Ya Ru} and Lin, {Jian Hao} and Huang, {Yi Ting} and Tsai, {Te Kai} and Hsu, {Kai Ti} and Su, {Yi Han} and Hsieh, {Yong Fen}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",

year = "2022",

doi = "10.1109/EDTM53872.2022.9798380",

language = "English",

series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "238--240",

booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

address = "美國",

}

Tsui, BY, Jhuang, YR, Lin, JH, Huang, YT, Tsai, TK, Hsu, KT, Su, YH & Hsieh, YF 2022, Device isolation process for 4H-SiC CMOS ICs. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 238-240, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 6/03/22. https://doi.org/10.1109/EDTM53872.2022.9798380

Device isolation process for 4H-SiC CMOS ICs. / Tsui, Bing Yue; Jhuang, Ya Ru; Lin, Jian Hao et al.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 238-240 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Device isolation process for 4H-SiC CMOS ICs

AU - Tsui, Bing Yue

AU - Jhuang, Ya Ru

AU - Lin, Jian Hao

AU - Huang, Yi Ting

AU - Tsai, Te Kai

AU - Hsu, Kai Ti

AU - Su, Yi Han

AU - Hsieh, Yong Fen

PY - 2022

Y1 - 2022

N2 - SiC CMOS ICs attract more and more attention recently. Semi-recessed isolation is one of the key processes for sub-micron ICs. In this paper, LOCal Oxidation of SiC (LOCOSiC) process is reviewed. The growth process and shape control of the field oxide are discussed. The influence of LOCOSiC isolation on gate oxide reliability, junction leakage current, and isolation capability are also presented.

AB - SiC CMOS ICs attract more and more attention recently. Semi-recessed isolation is one of the key processes for sub-micron ICs. In this paper, LOCal Oxidation of SiC (LOCOSiC) process is reviewed. The growth process and shape control of the field oxide are discussed. The influence of LOCOSiC isolation on gate oxide reliability, junction leakage current, and isolation capability are also presented.

KW - CMOS

KW - ICs and Isolation

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=85133977350&partnerID=8YFLogxK

U2 - 10.1109/EDTM53872.2022.9798380

DO - 10.1109/EDTM53872.2022.9798380

M3 - Conference contribution

AN - SCOPUS:85133977350

T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

SP - 238

EP - 240

BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Y2 - 6 March 2022 through 9 March 2022

ER -

Tsui BY, Jhuang YR, Lin JH, Huang YT, Tsai TK, Hsu KT et al. Device isolation process for 4H-SiC CMOS ICs. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 238-240. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9798380

Device isolation process for 4H-SiC CMOS ICs

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