Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si

Chi Wei Chao; Yew-Chuhg Wu; Gau Ren Hu; Ming Shian Feng

doi:10.1143/JJAP.42.1556

Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si

Chi Wei Chao^*, Yew-Chuhg Wu, Gau Ren Hu, Ming Shian Feng

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.

Original language	English
Pages (from-to)	1556-1559
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	4R
DOIs	https://doi.org/10.1143/JJAP.42.1556
State	Published - Apr 2003

Keywords

Electroless plating and physical vapor deposition
Metal-induced lateral crystallization
Solid phase crystallization
Thin-film transistor

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10.1143/JJAP.42.1556

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title = "Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si",

abstract = "Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.",

keywords = "Electroless plating and physical vapor deposition, Metal-induced lateral crystallization, Solid phase crystallization, Thin-film transistor",

author = "Chao, {Chi Wei} and Yew-Chuhg Wu and Hu, {Gau Ren} and Feng, {Ming Shian}",

year = "2003",

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Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si. / Chao, Chi Wei; Wu, Yew-Chuhg; Hu, Gau Ren et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4R, 04.2003, p. 1556-1559.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si

AU - Chao, Chi Wei

AU - Wu, Yew-Chuhg

AU - Hu, Gau Ren

AU - Feng, Ming Shian

PY - 2003/4

Y1 - 2003/4

N2 - Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.

AB - Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.

KW - Electroless plating and physical vapor deposition

KW - Metal-induced lateral crystallization

KW - Solid phase crystallization

KW - Thin-film transistor

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4R

ER -

Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si

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Keywords

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