Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - Apr 2003|
- Electroless plating and physical vapor deposition
- Metal-induced lateral crystallization
- Solid phase crystallization
- Thin-film transistor