Development of post-annealing method for flexible oxide TFTs application

Chur Shyang Fuh; Po-Tsun Liu; Li Feng Teng; Yang Shun Fan; Chih Hsiang Chang; Yu Ta Wu; Sih Wei Huang; Han Ping D. Shieh

doi:10.1002/j.2168-0159.2013.tb06397.x

Development of post-annealing method for flexible oxide TFTs application

Chur Shyang Fuh, Po-Tsun Liu^*, Li Feng Teng, Yang Shun Fan, Chih Hsiang Chang, Yu Ta Wu, Sih Wei Huang, Han Ping D. Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.

Original language	English
Pages (from-to)	1026-1028
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2013.tb06397.x
State	Published - 1 Jan 2013

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@article{7bb614315cdc4ee3bb55db89aa1f9f36,

title = "Development of post-annealing method for flexible oxide TFTs application",

abstract = "Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.",

author = "Fuh, {Chur Shyang} and Po-Tsun Liu and Teng, {Li Feng} and Fan, {Yang Shun} and Chang, {Chih Hsiang} and Wu, {Yu Ta} and Huang, {Sih Wei} and Shieh, {Han Ping D.}",

year = "2013",

month = jan,

day = "1",

doi = "10.1002/j.2168-0159.2013.tb06397.x",

language = "English",

volume = "44",

pages = "1026--1028",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "1",

}

TY - JOUR

T1 - Development of post-annealing method for flexible oxide TFTs application

AU - Fuh, Chur Shyang

AU - Liu, Po-Tsun

AU - Teng, Li Feng

AU - Fan, Yang Shun

AU - Chang, Chih Hsiang

AU - Wu, Yu Ta

AU - Huang, Sih Wei

AU - Shieh, Han Ping D.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.

AB - Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.

UR - http://www.scopus.com/inward/record.url?scp=84905220899&partnerID=8YFLogxK

U2 - 10.1002/j.2168-0159.2013.tb06397.x

DO - 10.1002/j.2168-0159.2013.tb06397.x

M3 - Article

AN - SCOPUS:84905220899

SN - 0097-966X

VL - 44

SP - 1026

EP - 1028

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

ER -

Development of post-annealing method for flexible oxide TFTs application

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