Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jan 2013|