Development of low temperature Cu[sbnd]Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Keyphrases

• Low Temperature 100%
• 3D IC 100%
• Cu-Cu Bonding 100%
• Hybrid Bonding 100%
• Bonding Technology 50%
• Coplanarity 50%
• Three-dimensional Integration 50%
• Thermo-compression Bonding 50%
• Electrical Properties 25%
• Bonding Process 25%
• Fine pitch 25%
• Back-end-of-line 25%
• Thermal Budget 25%
• Thermal Properties 25%
• High Thermals 25%
• Cu-based 25%
• Misalignment 25%
• Ultra-high Density 25%
• High Mechanical Strength 25%
• O Density 25%
• Bonding Interface 25%
• Extensive Survey 25%
• Cu-SiO2 25%
• Cu pillar 25%
• Chip Stacking 25%
• Cost Consideration 25%
• Wafer Stacking 25%
• Wafer Warpage 25%
• Cu Lead 25%
• Soldering Technology 25%
• Vertical chip 25%

Engineering

• Low-Temperature 100%
• Three Dimensional Integrated Circuits 100%
• Bonding Technology 50%
• Thermal Compression Bonding 50%
• Bonding Process 25%
• Process Lines 25%
• Review Paper 25%
• Copper (Cu) 25%
• Silicon Dioxide 25%