Determination of diffusion length and surface recombination velocity by light excitation

Chen-Ming Hu*, Clifford Drowley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


The current induced by a monochromatic light source in a Schottky barrier or p-n junction perpendicular to the sample surface is analyzed. Expressions for the induced current are derived for a scanning light spot and for uniform illumination with part of the sample shadowed. A uniform illumination induces a current that is more nearly an exponential function of the distance between the junction and the illuminated area than a moving spot. When the effect of surface recombination is strong, an alternative method of deducing the diffusion length from the measured current is suggested. The surface recombination velocity may be determined from the dependence of the collected current on the optical penetration depth in a simple manner.

Original languageEnglish
Pages (from-to)965-968
Number of pages4
JournalSolid State Electronics
Issue number7
StatePublished - 1 Jan 1978


Dive into the research topics of 'Determination of diffusion length and surface recombination velocity by light excitation'. Together they form a unique fingerprint.

Cite this