Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

Y. F. Lin; Wen-Bin Jian; Z. Y. Wu; F. R. Chen; J. J. Kai; Juhn-Jong Lin

doi:10.1109/INEC.2008.4585677

Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

Y. F. Lin, Wen-Bin Jian^*, Z. Y. Wu, F. R. Chen, J. J. Kai, Juhn-Jong Lin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	1112-1115
Number of pages	4
DOIs	https://doi.org/10.1109/INEC.2008.4585677
State	Published - Mar 2008
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: 24 Mar 2008 → 27 Mar 2008

Publication series

Name	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/Territory	China
City	Shanghai
Period	24/03/08 → 27/03/08

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10.1109/INEC.2008.4585677

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Lin, Y. F., Jian, W.-B., Wu, Z. Y., Chen, F. R., Kai, J. J., & Lin, J.-J. (2008). Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices. In 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 (pp. 1112-1115). Article 4585677 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008). https://doi.org/10.1109/INEC.2008.4585677

@inproceedings{60c8a0b462f743d9878e7ed912e1d86a,

title = "Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices",

abstract = "Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.",

author = "Lin, {Y. F.} and Wen-Bin Jian and Wu, {Z. Y.} and Chen, {F. R.} and Kai, {J. J.} and Juhn-Jong Lin",

year = "2008",

month = mar,

doi = "10.1109/INEC.2008.4585677",

language = "English",

isbn = "9781424415731",

series = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

pages = "1112--1115",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

note = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 ; Conference date: 24-03-2008 Through 27-03-2008",

}

Lin, YF, Jian, W-B, Wu, ZY, Chen, FR, Kai, JJ & Lin, J-J 2008, Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585677, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, pp. 1112-1115, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 24/03/08. https://doi.org/10.1109/INEC.2008.4585677

Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices. / Lin, Y. F.; Jian, Wen-Bin; Wu, Z. Y. et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 1112-1115 4585677 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

AU - Lin, Y. F.

AU - Jian, Wen-Bin

AU - Wu, Z. Y.

AU - Chen, F. R.

AU - Kai, J. J.

AU - Lin, Juhn-Jong

PY - 2008/3

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N2 - Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.

AB - Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.

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U2 - 10.1109/INEC.2008.4585677

DO - 10.1109/INEC.2008.4585677

M3 - Conference contribution

AN - SCOPUS:52649151374

SN - 9781424415731

T3 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

SP - 1112

EP - 1115

BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Y2 - 24 March 2008 through 27 March 2008

ER -

Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

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