Deterioration of near-UV GaN-based LEDs in seawater vapour

Yi Tai Chen, Bo Hong Lin, Ssu Han Lu, Zi Wei Li, Yu Sheng Tsai, Tai Ping Sun, Yew Chung Sermon Wu, Hsiang Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Reliability investigations were conducted after GaN-based LEDs were stressed in seawater vapour. Multiple electrical, optical, and material analyses on the fine nanostructures of the LED were examined. Results indicate that dark spots on the surface and etching trenches observed on the cross section might damage the quantum well and degrade LED performance. Dissolved sodium ions might diffuse and punch through the quantum well and be responsible for these spots and trenches.

Original languageEnglish
Article number103432
JournalResults in Physics
Volume19
DOIs
StatePublished - Dec 2020

Keywords

  • Etching
  • Light emitting diode
  • Quantum wells
  • Reliability
  • Semiconductor device characterization

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