TY - GEN
T1 - Designer germanium quantum dot phototransistor for near infrared optical detection and amplification
AU - Kuo, Ming Hao
AU - Lai, Wei Ting
AU - Hsu, Tzyy Min
AU - Li, Pei-Wen
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2015/6
Y1 - 2015/6
N2 - We demonstrated a novel CMOS approach for the fabrication of high-performance germanium quantum dot (QD) phototransistor (PT) offering great promises as optical switches and transducers for Si-based optical interconnects. Illumination produces significant enhancement in the drain current of Ge QD PTs when biased at both on-and off-states, primarily resulting from photoconductive and photovoltaic effects. Measured photocurrent to dark current ratio (Iph/Idark) and photoresponsivities from the Ge QD PT were as high as 53,000 and 2.7 A/W, respectively, under incident power of 0.9mW at 850 nm illumination.
AB - We demonstrated a novel CMOS approach for the fabrication of high-performance germanium quantum dot (QD) phototransistor (PT) offering great promises as optical switches and transducers for Si-based optical interconnects. Illumination produces significant enhancement in the drain current of Ge QD PTs when biased at both on-and off-states, primarily resulting from photoconductive and photovoltaic effects. Measured photocurrent to dark current ratio (Iph/Idark) and photoresponsivities from the Ge QD PT were as high as 53,000 and 2.7 A/W, respectively, under incident power of 0.9mW at 850 nm illumination.
UR - http://www.scopus.com/inward/record.url?scp=84963876675&partnerID=8YFLogxK
U2 - 10.1109/SNW.2014.7348535
DO - 10.1109/SNW.2014.7348535
M3 - Conference contribution
AN - SCOPUS:84963876675
T3 - 2014 Silicon Nanoelectronics Workshop, SNW 2014
BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Silicon Nanoelectronics Workshop, SNW 2014
Y2 - 8 June 2014 through 9 June 2014
ER -