Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors

Wei Xiang You; Pin Su

doi:10.1109/TED.2017.2714687

Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors

Wei Xiang You^*, Pin Su

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

With the aid of an analytical and scalable model, this paper explores the design space for negative-capacitance (NC) field-effect transistors (FETs) with a 2D semiconducting transition-metal-dichalcogenide channel. In addition, the impact of back-gate biasing on the design space and the body effect of 2D-NCFETs is also investigated. Our study indicates that, to mitigate the conflict between subthreshold swing and hysteresis and to maximize the design space for the 2D-NCFET, a thin buried oxide and an adequate reverse back-gate bias can be applied to achieve the optimum design.

Original language	English
Article number	7956271
Pages (from-to)	3476-3481
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	8
DOIs	https://doi.org/10.1109/TED.2017.2714687
State	Published - 1 Aug 2017

Keywords

2D semiconductors
back-gate biasing
ferroelectric FET
Landau-Khalatnikov (L-K) equation
molybdenum disulphide (MoS2)
negative-capacitance field-effect transistor (NCFET)
transition-metal-dichalcogenide (TMD)

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title = "Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors",

abstract = "With the aid of an analytical and scalable model, this paper explores the design space for negative-capacitance (NC) field-effect transistors (FETs) with a 2D semiconducting transition-metal-dichalcogenide channel. In addition, the impact of back-gate biasing on the design space and the body effect of 2D-NCFETs is also investigated. Our study indicates that, to mitigate the conflict between subthreshold swing and hysteresis and to maximize the design space for the 2D-NCFET, a thin buried oxide and an adequate reverse back-gate bias can be applied to achieve the optimum design.",

keywords = "2D semiconductors, back-gate biasing, ferroelectric FET, Landau-Khalatnikov (L-K) equation, molybdenum disulphide (MoS2), negative-capacitance field-effect transistor (NCFET), transition-metal-dichalcogenide (TMD)",

author = "You, {Wei Xiang} and Pin Su",

year = "2017",

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doi = "10.1109/TED.2017.2714687",

language = "English",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors

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AU - Su, Pin

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AB - With the aid of an analytical and scalable model, this paper explores the design space for negative-capacitance (NC) field-effect transistors (FETs) with a 2D semiconducting transition-metal-dichalcogenide channel. In addition, the impact of back-gate biasing on the design space and the body effect of 2D-NCFETs is also investigated. Our study indicates that, to mitigate the conflict between subthreshold swing and hysteresis and to maximize the design space for the 2D-NCFET, a thin buried oxide and an adequate reverse back-gate bias can be applied to achieve the optimum design.

KW - 2D semiconductors

KW - back-gate biasing

KW - ferroelectric FET

KW - Landau-Khalatnikov (L-K) equation

KW - molybdenum disulphide (MoS2)

KW - negative-capacitance field-effect transistor (NCFET)

KW - transition-metal-dichalcogenide (TMD)

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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M1 - 7956271

ER -

Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors

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