TY - GEN
T1 - Design optimization of inductively source-degenerated FET LNAs using noise transformation matrix (invited talk)
AU - Meng, Chin-Chun
AU - Hsiao, Yu Chih
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/9/27
Y1 - 2016/9/27
N2 - Analytical formulas of noise parameters for inductively source-degenerated LNAs in single-/dual-band configurations were derived using noise transformation matrix recently. In the past, the design optimization of a single-band LNA was achieved by solving the noise equation explicitly in a tedious way. However, it is difficult to optimize LNAs of other configurations such as dual-band, multi-band and broadband topologies because it becomes formidable to solve the noise equation explicitly. Our recent research shows that the noise equation of an LNA can be solved implicitly using noise transformation matrix and an insightful design optimization of a dual-band LNA is thus obtained. The paper reviews all the previous work of single-band LNAs done by others in the literature and then concludes with our experimental results of a dual-band LNA with the balanced noise performance.
AB - Analytical formulas of noise parameters for inductively source-degenerated LNAs in single-/dual-band configurations were derived using noise transformation matrix recently. In the past, the design optimization of a single-band LNA was achieved by solving the noise equation explicitly in a tedious way. However, it is difficult to optimize LNAs of other configurations such as dual-band, multi-band and broadband topologies because it becomes formidable to solve the noise equation explicitly. Our recent research shows that the noise equation of an LNA can be solved implicitly using noise transformation matrix and an insightful design optimization of a dual-band LNA is thus obtained. The paper reviews all the previous work of single-band LNAs done by others in the literature and then concludes with our experimental results of a dual-band LNA with the balanced noise performance.
KW - field effect transistor
KW - inductively source-degenerated low-noise amplifier
UR - http://www.scopus.com/inward/record.url?scp=84994761199&partnerID=8YFLogxK
U2 - 10.1109/RFIT.2016.7578207
DO - 10.1109/RFIT.2016.7578207
M3 - Conference contribution
AN - SCOPUS:84994761199
T3 - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
BT - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Y2 - 24 August 2016 through 26 August 2016
ER -