Design of power-rail ESD clamp circuit with adjustable holding voltage against mis-trigger or transient-induced latch-on events

Chih Ting Yeh*, Yung Chih Liang, Ming-Dou Ker

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations

    Abstract

    In this work, a new design of the ESD-transient detection circuit with the n-channel metal-oxide-semiconductor (nMOS) transistor drawn in the layout style of big field-effect transistor (BigFET) has been proposed and verified in a 65nm 1.2V CMOS process. As compared to the traditional RC-based ESD-transient detection circuit, the layout area of the new ESD-transient detection circuit can be greatly reduced by more than 54%. From the experimental results, the new proposed ESD-transient detection circuit with adjustable holding voltage can achieve long turn-on duration under the ESD stress condition, as well as better immunity against mis-trigger or transient-induced latch-on event under the fast power-on and transient noise conditions.

    Original languageEnglish
    Title of host publication2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
    Pages1403-1406
    Number of pages4
    DOIs
    StatePublished - 2 Aug 2011
    Event2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brazil
    Duration: 15 May 201118 May 2011

    Publication series

    NameProceedings - IEEE International Symposium on Circuits and Systems
    ISSN (Print)0271-4310

    Conference

    Conference2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
    Country/TerritoryBrazil
    CityRio de Janeiro
    Period15/05/1118/05/11

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