Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process

Ming-Dou Ker; Chyh Yih Chang; Hsin Chin Jiang

doi:10.1109/APASIC.2002.1031553

Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process

Ming-Dou Ker, Chyh Yih Chang, Hsin Chin Jiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

A charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25 μm CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25 μm CMOS process with grounded p-type substrate.

Original language	English
Title of host publication	2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	145-148
Number of pages	4
ISBN (Electronic)	0780373634, 9780780373631
DOIs	https://doi.org/10.1109/APASIC.2002.1031553
State	Published - 2002
Event	3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Taipei, Taiwan Duration: 6 Aug 2002 → 8 Aug 2002

Publication series

Name	2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings

Conference

Conference	3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002
Country/Territory	Taiwan
City	Taipei
Period	6/08/02 → 8/08/02

Keywords

Polysilicon diode
charge pump circuit

Access to Document

10.1109/APASIC.2002.1031553

Cite this

Ker, M.-D., Chang, C. Y., & Jiang, H. C. (2002). Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process. In 2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings (pp. 145-148). Article 1031553 (2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APASIC.2002.1031553

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title = "Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process",

abstract = "A charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25 μm CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25 μm CMOS process with grounded p-type substrate.",

keywords = "Polysilicon diode, charge pump circuit",

author = "Ming-Dou Ker and Chang, {Chyh Yih} and Jiang, {Hsin Chin}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 ; Conference date: 06-08-2002 Through 08-08-2002",

year = "2002",

doi = "10.1109/APASIC.2002.1031553",

language = "English",

series = "2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "美國",

}

Ker, M-D, Chang, CY & Jiang, HC 2002, Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process. in 2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings., 1031553, 2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 145-148, 3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002, Taipei, Taiwan, 6/08/02. https://doi.org/10.1109/APASIC.2002.1031553

Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process. / Ker, Ming-Dou; Chang, Chyh Yih; Jiang, Hsin Chin.
2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2002. p. 145-148 1031553 (2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ker, Ming-Dou

AU - Chang, Chyh Yih

AU - Jiang, Hsin Chin

PY - 2002

Y1 - 2002

N2 - A charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25 μm CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25 μm CMOS process with grounded p-type substrate.

AB - A charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25 μm CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25 μm CMOS process with grounded p-type substrate.

KW - Polysilicon diode

KW - charge pump circuit

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U2 - 10.1109/APASIC.2002.1031553

DO - 10.1109/APASIC.2002.1031553

M3 - Conference contribution

AN - SCOPUS:3042514393

T3 - 2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings

SP - 145

EP - 148

BT - 2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002

Y2 - 6 August 2002 through 8 August 2002

ER -

Ker MD, Chang CY, Jiang HC. Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process. In 2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 145-148. 1031553. (2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings). doi: 10.1109/APASIC.2002.1031553

Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process

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