Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Pei-Wen Li; W. M. Liao

doi:10.1116/1.1474422

Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Pei-Wen Li^*
, W. M. Liao

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.

Original language	English
Pages (from-to)	1030-1033
Number of pages	4
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1474422
State	Published - May 2002

Access to Document

10.1116/1.1474422

Cite this

@article{fc2ca8abca9949bd9a6ce81f23599624,

title = "Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects",

abstract = "A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.",

author = "Pei-Wen Li and Liao, \{W. M.\}",

year = "2002",

month = may,

doi = "10.1116/1.1474422",

language = "English",

volume = "20",

pages = "1030--1033",

journal = "Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

AU - Li, Pei-Wen

AU - Liao, W. M.

PY - 2002/5

Y1 - 2002/5

N2 - A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.

AB - A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.

UR - https://www.scopus.com/pages/publications/0036565355

U2 - 10.1116/1.1474422

DO - 10.1116/1.1474422

M3 - Article

AN - SCOPUS:0036565355

SN - 0734-2101

VL - 20

SP - 1030

EP - 1033

JO - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

IS - 3

ER -

Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Abstract

Access to Document

Other files and links

Fingerprint

Cite this