Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Pei-Wen Li; W. M. Liao

doi:10.1116/1.1474422

Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Pei-Wen Li^*, W. M. Liao

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.

Original language	English
Pages (from-to)	1030-1033
Number of pages	4
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1474422
State	Published - May 2002

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10.1116/1.1474422

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title = "Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects",

abstract = "A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.",

author = "Pei-Wen Li and Liao, {W. M.}",

year = "2002",

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AU - Li, Pei-Wen

AU - Liao, W. M.

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N2 - A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.

AB - A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.

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DO - 10.1116/1.1474422

M3 - Article

AN - SCOPUS:0036565355

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JO - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

IS - 3

ER -

Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Abstract

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