Abstract
A hydrogenated amorphous silicon (a-Si:H) thin-film transistor(TFT) gate driver on array (GOA) with threshold voltage compensation at the low level holding TFT and full time noise-free for maintaining the high reliability has been proposed. The full-time noise-free part consists of an compensation circuit block and an pull down TFT with clock signal controlled. The method of threshold voltage compensation is the charge storage of capacitance with stress imitation TFT. Also, using single path for both charging and discharging with capacitive anti-noise block can efficiently resist noise signal and diminish the using area The proposed gate driver has been successfully processed and the measurement result is fit on simulation. Moreover, the proposed circuit design has passed 800 hours reliability test at high temperature and 4200 lux back-light with less degrade of performance.
| Original language | English |
|---|---|
| Pages (from-to) | 365-368 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 49 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2018 |
| Event | SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States Duration: 20 May 2018 → 25 May 2018 |
Keywords
- A-Si TFT
- TFT-LCD
- gate driver on array