Design of High-Power Red VCSEL on a Removable Substrate

Chun Yen Peng, Wei Ta Huang, Zhi Kuang Lu, Shih Chen Chen, Hao Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 680 nm was studied. The design of quantum well, including the well thickness, indium composition, and barrier aluminum composition targeting the emission wavelength, was elaborately optimized. Moreover, the influences of leakage current, temperature dependence of optical gain, and resonance mode gain to threshold current under different barrier aluminum compositions were investigated. Lastly, the temperature characteristics of InAlGaP/InGaP VCSEL with substrate removal have also been calculated with 24% and 40.6% improvement in thermal resistance and operating current range, respectively. It holds great promise for high-power red VCSEL application.

Original languageEnglish
Article number763
JournalPhotonics
Volume9
Issue number10
DOIs
StatePublished - Oct 2022

Keywords

  • leakage effect
  • material gain
  • quantum well
  • strain
  • substrate removal
  • vertical-cavity surface-emitting laser

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