Design of High-Power Red VCSEL on a Removable Substrate

Chun Yen Peng; Wei Ta Huang; Zhi Kuang Lu; Shih Chen Chen; Hao Chung Kuo

doi:10.3390/photonics9100763

Design of High-Power Red VCSEL on a Removable Substrate

Chun Yen Peng, Wei Ta Huang, Zhi Kuang Lu, Shih Chen Chen, Hao Chung Kuo^*

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 680 nm was studied. The design of quantum well, including the well thickness, indium composition, and barrier aluminum composition targeting the emission wavelength, was elaborately optimized. Moreover, the influences of leakage current, temperature dependence of optical gain, and resonance mode gain to threshold current under different barrier aluminum compositions were investigated. Lastly, the temperature characteristics of InAlGaP/InGaP VCSEL with substrate removal have also been calculated with 24% and 40.6% improvement in thermal resistance and operating current range, respectively. It holds great promise for high-power red VCSEL application.

Original language	English
Article number	763
Journal	Photonics
Volume	9
Issue number	10
DOIs	https://doi.org/10.3390/photonics9100763
State	Published - Oct 2022

Keywords

leakage effect
material gain
quantum well
strain
substrate removal
vertical-cavity surface-emitting laser

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10.3390/photonics9100763

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title = "Design of High-Power Red VCSEL on a Removable Substrate",

abstract = "In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 680 nm was studied. The design of quantum well, including the well thickness, indium composition, and barrier aluminum composition targeting the emission wavelength, was elaborately optimized. Moreover, the influences of leakage current, temperature dependence of optical gain, and resonance mode gain to threshold current under different barrier aluminum compositions were investigated. Lastly, the temperature characteristics of InAlGaP/InGaP VCSEL with substrate removal have also been calculated with 24% and 40.6% improvement in thermal resistance and operating current range, respectively. It holds great promise for high-power red VCSEL application.",

keywords = "leakage effect, material gain, quantum well, strain, substrate removal, vertical-cavity surface-emitting laser",

author = "Peng, {Chun Yen} and Huang, {Wei Ta} and Lu, {Zhi Kuang} and Chen, {Shih Chen} and Kuo, {Hao Chung}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = oct,

doi = "10.3390/photonics9100763",

language = "English",

volume = "9",

journal = "Photonics",

issn = "2304-6732",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "10",

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TY - JOUR

T1 - Design of High-Power Red VCSEL on a Removable Substrate

AU - Peng, Chun Yen

AU - Huang, Wei Ta

AU - Lu, Zhi Kuang

AU - Chen, Shih Chen

AU - Kuo, Hao Chung

PY - 2022/10

Y1 - 2022/10

N2 - In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 680 nm was studied. The design of quantum well, including the well thickness, indium composition, and barrier aluminum composition targeting the emission wavelength, was elaborately optimized. Moreover, the influences of leakage current, temperature dependence of optical gain, and resonance mode gain to threshold current under different barrier aluminum compositions were investigated. Lastly, the temperature characteristics of InAlGaP/InGaP VCSEL with substrate removal have also been calculated with 24% and 40.6% improvement in thermal resistance and operating current range, respectively. It holds great promise for high-power red VCSEL application.

AB - In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 680 nm was studied. The design of quantum well, including the well thickness, indium composition, and barrier aluminum composition targeting the emission wavelength, was elaborately optimized. Moreover, the influences of leakage current, temperature dependence of optical gain, and resonance mode gain to threshold current under different barrier aluminum compositions were investigated. Lastly, the temperature characteristics of InAlGaP/InGaP VCSEL with substrate removal have also been calculated with 24% and 40.6% improvement in thermal resistance and operating current range, respectively. It holds great promise for high-power red VCSEL application.

KW - leakage effect

KW - material gain

KW - quantum well

KW - strain

KW - substrate removal

KW - vertical-cavity surface-emitting laser

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U2 - 10.3390/photonics9100763

DO - 10.3390/photonics9100763

M3 - Article

AN - SCOPUS:85140789956

SN - 2304-6732

VL - 9

JO - Photonics

JF - Photonics

IS - 10

M1 - 763

ER -

Design of High-Power Red VCSEL on a Removable Substrate

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