Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

Li Wei Chu; Chun Yu Lin; Shiang Yu Tsai; Ming-Dou Ker; Ming Hsiang Song; Chewn Pu Jou; Tse Hua Lu; Jen Chou Tseng; Ming Hsien Tsai; Tsun Lai Hsu; Ping Fang Hung; Tzu Heng Chang; Yu Lin Wei

Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

Li Wei Chu^*, Chun Yu Lin, Shiang Yu Tsai, Ming-Dou Ker, Ming Hsiang Song, Chewn Pu Jou, Tse Hua Lu, Jen Chou Tseng, Ming Hsien Tsai, Tsun Lai Hsu, Ping Fang Hung, Tzu Heng Chang, Yu Lin Wei

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.

Original language	English
Title of host publication	Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012
State	Published - 27 Nov 2012
Event	34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012 - Tucson, AZ, United States Duration: 9 Sep 2012 → 14 Sep 2012

Publication series

Name	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)	0739-5159

Conference

Conference	34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012
Country/Territory	United States
City	Tucson, AZ
Period	9/09/12 → 14/09/12

Cite this

Chu, L. W., Lin, C. Y., Tsai, S. Y., Ker, M-D., Song, M. H., Jou, C. P., Lu, T. H., Tseng, J. C., Tsai, M. H., Hsu, T. L., Hung, P. F., Chang, T. H., & Wei, Y. L. (2012). Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012 [6333325] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

@inproceedings{fd282287d8a246a282dfc752d3f89412,

title = "Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process",

abstract = "An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.",

author = "Chu, {Li Wei} and Lin, {Chun Yu} and Tsai, {Shiang Yu} and Ming-Dou Ker and Song, {Ming Hsiang} and Jou, {Chewn Pu} and Lu, {Tse Hua} and Tseng, {Jen Chou} and Tsai, {Ming Hsien} and Hsu, {Tsun Lai} and Hung, {Ping Fang} and Chang, {Tzu Heng} and Wei, {Yu Lin}",

year = "2012",

month = nov,

day = "27",

language = "English",

isbn = "1585372188",

series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",

booktitle = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012",

note = "34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012 ; Conference date: 09-09-2012 Through 14-09-2012",

}

Chu, LW, Lin, CY, Tsai, SY, Ker, M-D, Song, MH, Jou, CP, Lu, TH, Tseng, JC, Tsai, MH, Hsu, TL, Hung, PF, Chang, TH & Wei, YL 2012, Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process. in Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012., 6333325, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012, Tucson, AZ, United States, 9/09/12.

Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process. / Chu, Li Wei; Lin, Chun Yu; Tsai, Shiang Yu et al.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012. 2012. 6333325 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

AU - Chu, Li Wei

AU - Lin, Chun Yu

AU - Tsai, Shiang Yu

AU - Ker, Ming-Dou

AU - Song, Ming Hsiang

AU - Jou, Chewn Pu

AU - Lu, Tse Hua

AU - Tseng, Jen Chou

AU - Tsai, Ming Hsien

AU - Hsu, Tsun Lai

AU - Hung, Ping Fang

AU - Chang, Tzu Heng

AU - Wei, Yu Lin

PY - 2012/11/27

Y1 - 2012/11/27

N2 - An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.

AB - An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.

UR - http://www.scopus.com/inward/record.url?scp=84869836203&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84869836203

SN - 1585372188

SN - 9781585372188

T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012

T2 - 34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012

Y2 - 9 September 2012 through 14 September 2012

ER -

Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

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