Design of dual-band ESD protection for 24-/60-GHz millimeter-wave circuits

Li Wei Chu*, Chun Yu Lin, Ming-Dou Ker

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Scopus citations


    To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits.

    Original languageEnglish
    Article number6296697
    Pages (from-to)110-118
    Number of pages9
    JournalIEEE Transactions on Device and Materials Reliability
    Issue number1
    StatePublished - 19 Mar 2013


    • CMOS
    • dual-band
    • electrostatic discharge (ESD) protection
    • millimeter-wave (MMW)
    • radio frequency (RF)


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