Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

Ting Chou Lu; Ming-Dou Ker; Hsiao-Wen Zan; Chung Hung Kuo; Chun Huai Li; Yao Jen Hsieh; Chun Ting Liu

doi:10.1109/CICC.2008.4672188

Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

Ting Chou Lu^*, Ming-Dou Ker, Hsiao-Wen Zan, Chung Hung Kuo, Chun Huai Li, Yao Jen Hsieh, Chun Ting Liu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-μim LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/°C under the supply voltage of 10V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.

Original language	English
Article number	4672188
Pages (from-to)	721-724
Number of pages	4
Journal	Proceedings of the Custom Integrated Circuits Conference
DOIs	https://doi.org/10.1109/CICC.2008.4672188
State	Published - 26 Dec 2008
Event	IEEE 2008 Custom Integrated Circuits Conference, CICC 2008 - San Jose, CA, United States Duration: 21 Sep 2008 → 24 Sep 2008

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title = "Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process",

abstract = "A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-μim LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/°C under the supply voltage of 10V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.",

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T1 - Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

AU - Lu, Ting Chou

AU - Ker, Ming-Dou

AU - Zan, Hsiao-Wen

AU - Kuo, Chung Hung

AU - Li, Chun Huai

AU - Hsieh, Yao Jen

AU - Liu, Chun Ting

PY - 2008/12/26

Y1 - 2008/12/26

N2 - A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-μim LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/°C under the supply voltage of 10V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.

AB - A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-μim LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/°C under the supply voltage of 10V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.

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M3 - Conference article

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JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

M1 - 4672188

Y2 - 21 September 2008 through 24 September 2008

ER -

Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

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