Design of 2×VDD-tolerant power-rail ESD clamp circuit with consideration of gate leakage current in 65-nm CMOS technology

Chang Tzu Wang*, Ming-Dou Ker

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    16 Scopus citations

    Abstract

    A low-leakage 2×VDD-tolerant power-rail electrostatic discharge (ESD) clamp circuit composed of the silicon-controlled rectifier (SCR) device and new ESD detection circuit, realized with only thin-oxide 1× VDD devices, has been proposed with consideration of gate leakage current. By reducing the voltage across the gate oxides of the devices in the ESD detection circuit, the whole power-rail ESD clamp circuit can achieve an ultralow standby leakage current. The new proposed circuit has successfully been verified in a 1-V 65-nm CMOS process, which can achieve 6.5-kV human-body-model and 350-V machine-model ESD levels under ESD stresses, but only consumes a standby leakage current of 0.15 μA at room temperature under normal circuit operating conditions with 1.8-V bias.

    Original languageEnglish
    Article number5453055
    Pages (from-to)1460-1465
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Volume57
    Issue number6
    DOIs
    StatePublished - Jun 2010

    Keywords

    • Electrostatic discharge (ESD)
    • Gate leakage
    • Mixed-voltage input/output (I/O)
    • Silicon-controlled rectifier (SCR)

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