Design of 2×VDD logic gates with only 1×V DD devices in nanoscale CMOS technology

Po Yen Chiu, Ming-Dou Ker

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The novel 2×VDD NOT, NAND, and NOR logic gates have been designed and implemented in a nanoscale CMOS process with only 1×V DD devices. With the proposed dynamic source bias technique, the logic gates can be designed to have 2×VDD tolerant capability. Thus, the new 2×VDD logic gates can be operated under 2×VDD voltage environment without suffering the gate-oxide reliability issue.

    Original languageEnglish
    Title of host publicationProceedings - IEEE 26th International SOC Conference, SOCC 2013
    PublisherIEEE Computer Society
    Pages33-36
    Number of pages4
    ISBN (Print)9781479911660
    DOIs
    StatePublished - 1 Jan 2013
    Event26th IEEE International System-on-Chip Conference, SOCC 2013 - Erlangen, Germany
    Duration: 4 Sep 20136 Sep 2013

    Publication series

    NameInternational System on Chip Conference
    ISSN (Print)2164-1676
    ISSN (Electronic)2164-1706

    Conference

    Conference26th IEEE International System-on-Chip Conference, SOCC 2013
    Country/TerritoryGermany
    CityErlangen
    Period4/09/136/09/13

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