@inproceedings{67417648d6434c0a8259f5009dd487cb,
title = "Design and Fabrication of Self-Organized Ge Gate/SiO2/Si1-xGex-nanoshell with Raised Source/Drain for Advanced Transistors",
abstract = "We report a novel self-organized approach for the fabrication of Ge-nanospherical (NP) gate/SiO2/Si1-xGex-recess channel heterostructures with raised source/drain using a single oxidation step. By controlling the width of Si recess-trench, we are able to tune the size of Ge NPs which essentially determines the spherical-gate channel length. Our proposed approach and gate-stacking heterostructure of Ge-NP/SiO2/Si1-xGex-recess channel provides an effective building block for the fabrication of advanced Ge-based MOS and quantum transistors. ",
keywords = "channel engineering, germanium nanosphere, MOS, Self-organization, Si trench, SiGe",
author = "Wang, {I. Hsiang} and Peng, {Keng Ping} and Horng-Chih Lin and Pei-Wen Li",
year = "2020",
month = apr,
doi = "10.1109/EDTM47692.2020.9117850",
language = "English",
series = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings",
address = "美國",
note = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 ; Conference date: 06-04-2020 Through 21-04-2020",
}