Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process
- Yun Che Hsieh
- , Guan Jhih Lin*
- , Zuo Min Tsai*
- , Tzu Hung Chen
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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