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Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process
Yun Che Hsieh, Guan Jhih Lin*, Zuo Min Tsai*, Tzu Hung Chen
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
1
Scopus
citations