Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process

Yun Che Hsieh; Guan Jhih Lin; Zuo Min Tsai; Tzu Hung Chen

doi:10.1109/LMWT.2024.3368290

Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process

Yun Che Hsieh, Guan Jhih Lin^*, Zuo Min Tsai^*, Tzu Hung Chen

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-m Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and linearity improvement at high input power. Measurements indicate that the proposed PA has a small-signal gain of 17 dB, a saturated output power (PSAT ) of 24.5 dBm, an output 1-dB compression point (OP1dB) of 24.3 dBm, and a power-added efficiency (PAE) of 33.3%. The bandwidth of the PA ranges from 26 to 40 GHz, and thus covers the entire Ka-band. The proposed PA exhibits high performance, which makes it suitable for the applications of 5G wireless systems.

Original language	English
Pages (from-to)	427-430
Number of pages	4
Journal	IEEE Microwave and Wireless Technology Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1109/LMWT.2024.3368290
State	Published - 1 Apr 2024

Keywords

Fifth generation (5G)
Ka-band
gallium arsenide (GaAs)
linearity
millimeter wave (MMW)
pHEMT
power amplifier (PA)
stacked-FET
wideband

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10.1109/LMWT.2024.3368290

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title = "Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process",

abstract = "This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-m Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and linearity improvement at high input power. Measurements indicate that the proposed PA has a small-signal gain of 17 dB, a saturated output power (PSAT ) of 24.5 dBm, an output 1-dB compression point (OP1dB) of 24.3 dBm, and a power-added efficiency (PAE) of 33.3%. The bandwidth of the PA ranges from 26 to 40 GHz, and thus covers the entire Ka-band. The proposed PA exhibits high performance, which makes it suitable for the applications of 5G wireless systems.",

keywords = "Fifth generation (5G), Ka-band, gallium arsenide (GaAs), linearity, millimeter wave (MMW), pHEMT, power amplifier (PA), stacked-FET, wideband",

author = "Hsieh, {Yun Che} and Lin, {Guan Jhih} and Tsai, {Zuo Min} and Chen, {Tzu Hung}",

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AU - Hsieh, Yun Che

AU - Lin, Guan Jhih

AU - Tsai, Zuo Min

AU - Chen, Tzu Hung

PY - 2024/4/1

Y1 - 2024/4/1

N2 - This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-m Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and linearity improvement at high input power. Measurements indicate that the proposed PA has a small-signal gain of 17 dB, a saturated output power (PSAT ) of 24.5 dBm, an output 1-dB compression point (OP1dB) of 24.3 dBm, and a power-added efficiency (PAE) of 33.3%. The bandwidth of the PA ranges from 26 to 40 GHz, and thus covers the entire Ka-band. The proposed PA exhibits high performance, which makes it suitable for the applications of 5G wireless systems.

AB - This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-m Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and linearity improvement at high input power. Measurements indicate that the proposed PA has a small-signal gain of 17 dB, a saturated output power (PSAT ) of 24.5 dBm, an output 1-dB compression point (OP1dB) of 24.3 dBm, and a power-added efficiency (PAE) of 33.3%. The bandwidth of the PA ranges from 26 to 40 GHz, and thus covers the entire Ka-band. The proposed PA exhibits high performance, which makes it suitable for the applications of 5G wireless systems.

KW - Fifth generation (5G)

KW - Ka-band

KW - gallium arsenide (GaAs)

KW - linearity

KW - millimeter wave (MMW)

KW - pHEMT

KW - power amplifier (PA)

KW - stacked-FET

KW - wideband

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SN - 2771-957X

VL - 34

SP - 427

EP - 430

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

IS - 4

ER -

Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process

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Keywords

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