Abstract
A novel variation of plasma enhanced chemical vapour deposition in the form of insertion of a heated filament in the plasma was applied to a SiH4+1% B2H6 (in H2) +H2 gas mixture for the deposition of boron doped hydrogenated amorphous silicon thin films. Current levels giving filament temperatures below and above the thermionic emission level of the filament material were used to separate the effect of thermal dissociation of B2H6 from that of the production of atomic hydrogen in combination with B2H6 dissociation. Control runs without filament heating but accounting for rise in substrate temperature because of the heated coil were also carried out. The films were characterised by electrical and optical measurements, infrared vibrational spectroscopy and secondary ion mass spectroscopy. A significant enhancement in the doping efficiency, of boron was obtained by this technique and thus was found not to be an artifact of increase in substrate temperature. Nor could it be attributed to the effect of atomic hydrogen only.
Original language | English |
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Pages (from-to) | 769-776 |
Number of pages | 8 |
Journal | Solid State Communications |
Volume | 97 |
Issue number | 9 |
DOIs | |
State | Published - Mar 1996 |
Keywords
- A. Semiconductors
- A. Thin films
- D. Optical properties