Dependence of deep level concentrations on ammonia flow rate in n-type GaN films

L. Lee; F. C. Chang; H. M. Chung; M. C. Lee; W. H. Chen; Wei-Kuo Chen; B. R. Huang

Dependence of deep level concentrations on ammonia flow rate in n-type GaN films

L. Lee^*, F. C. Chang, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen, B. R. Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Deep level transient spectroscoppy was used to characterize the deep levels of GaN films grown with various V/III ratios using metalorganic vapor phase epitaxy. Two prominent defects, located at E_C-0.569±0.003 and E_C-1.013±0.091 eV, were detected in this study. When the NH₃ flow rate was increased, we observed a slight increase in trap concentration of the E_C-0.569 eV defect and a significant increase at E_C-1.013 eV. Although a high V/III seems necessary for obtaining good quality GaN film, our results indicate that, if the ammonia is in excessive supply, it may generate a large number of E_C-1.013 eV deep level defects, which deteriorate the film quality - which should be avoided with special care.

Original language	English
Pages (from-to)	424-428
Number of pages	5
Journal	Chinese Journal of Physics
Volume	40
Issue number	4
State	Published - 1 Aug 2002

Cite this

@article{a31b5cc122ba4b0c8449dee59babef44,

title = "Dependence of deep level concentrations on ammonia flow rate in n-type GaN films",

abstract = "Deep level transient spectroscoppy was used to characterize the deep levels of GaN films grown with various V/III ratios using metalorganic vapor phase epitaxy. Two prominent defects, located at EC-0.569±0.003 and EC-1.013±0.091 eV, were detected in this study. When the NH3 flow rate was increased, we observed a slight increase in trap concentration of the EC-0.569 eV defect and a significant increase at EC-1.013 eV. Although a high V/III seems necessary for obtaining good quality GaN film, our results indicate that, if the ammonia is in excessive supply, it may generate a large number of EC-1.013 eV deep level defects, which deteriorate the film quality - which should be avoided with special care.",

author = "L. Lee and Chang, {F. C.} and Chung, {H. M.} and Lee, {M. C.} and Chen, {W. H.} and Wei-Kuo Chen and Huang, {B. R.}",

year = "2002",

month = aug,

day = "1",

language = "English",

volume = "40",

pages = "424--428",

journal = "Chinese Journal of Physics",

issn = "0577-9073",

publisher = "Physical Society of the Republic of China",

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TY - JOUR

T1 - Dependence of deep level concentrations on ammonia flow rate in n-type GaN films

AU - Lee, L.

AU - Chang, F. C.

AU - Chung, H. M.

AU - Lee, M. C.

AU - Chen, W. H.

AU - Chen, Wei-Kuo

AU - Huang, B. R.

PY - 2002/8/1

Y1 - 2002/8/1

N2 - Deep level transient spectroscoppy was used to characterize the deep levels of GaN films grown with various V/III ratios using metalorganic vapor phase epitaxy. Two prominent defects, located at EC-0.569±0.003 and EC-1.013±0.091 eV, were detected in this study. When the NH3 flow rate was increased, we observed a slight increase in trap concentration of the EC-0.569 eV defect and a significant increase at EC-1.013 eV. Although a high V/III seems necessary for obtaining good quality GaN film, our results indicate that, if the ammonia is in excessive supply, it may generate a large number of EC-1.013 eV deep level defects, which deteriorate the film quality - which should be avoided with special care.

AB - Deep level transient spectroscoppy was used to characterize the deep levels of GaN films grown with various V/III ratios using metalorganic vapor phase epitaxy. Two prominent defects, located at EC-0.569±0.003 and EC-1.013±0.091 eV, were detected in this study. When the NH3 flow rate was increased, we observed a slight increase in trap concentration of the EC-0.569 eV defect and a significant increase at EC-1.013 eV. Although a high V/III seems necessary for obtaining good quality GaN film, our results indicate that, if the ammonia is in excessive supply, it may generate a large number of EC-1.013 eV deep level defects, which deteriorate the film quality - which should be avoided with special care.

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M3 - Article

AN - SCOPUS:0036386628

SN - 0577-9073

VL - 40

SP - 424

EP - 428

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 4

ER -

Dependence of deep level concentrations on ammonia flow rate in n-type GaN films

Abstract

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