Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates

Bao Yuan Wang; Chin Ya Su; Tian Li Wu

doi:10.1109/DRC55272.2022.9855794

Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates

Bao Yuan Wang, Chin Ya Su, Tian Li Wu^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.

Original language	English
Title of host publication	2022 Device Research Conference, DRC 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665498838
DOIs	https://doi.org/10.1109/DRC55272.2022.9855794
State	Published - 2022
Event	2022 Device Research Conference, DRC 2022 - Columbus, United States Duration: 26 Jun 2022 → 29 Jun 2022

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2022-June
ISSN (Print)	1548-3770

Conference

Conference	2022 Device Research Conference, DRC 2022
Country/Territory	United States
City	Columbus
Period	26/06/22 → 29/06/22

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10.1109/DRC55272.2022.9855794

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Wang, B. Y., Su, C. Y., & Wu, T. L. (2022). Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates. In 2022 Device Research Conference, DRC 2022 (Device Research Conference - Conference Digest, DRC; Vol. 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC55272.2022.9855794

@inproceedings{74809942d8914ea8b29ac322aacb645b,

title = "Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates",

abstract = "GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.",

author = "Wang, {Bao Yuan} and Su, {Chin Ya} and Wu, {Tian Li}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 Device Research Conference, DRC 2022 ; Conference date: 26-06-2022 Through 29-06-2022",

year = "2022",

doi = "10.1109/DRC55272.2022.9855794",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 Device Research Conference, DRC 2022",

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}

Wang, BY, Su, CY & Wu, TL 2022, Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates. in 2022 Device Research Conference, DRC 2022. Device Research Conference - Conference Digest, DRC, vol. 2022-June, Institute of Electrical and Electronics Engineers Inc., 2022 Device Research Conference, DRC 2022, Columbus, United States, 26/06/22. https://doi.org/10.1109/DRC55272.2022.9855794

Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates. / Wang, Bao Yuan; Su, Chin Ya; Wu, Tian Li.
2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Device Research Conference - Conference Digest, DRC; Vol. 2022-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wang, Bao Yuan

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AU - Wu, Tian Li

PY - 2022

Y1 - 2022

N2 - GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.

AB - GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.

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M3 - Conference contribution

AN - SCOPUS:85137668906

T3 - Device Research Conference - Conference Digest, DRC

BT - 2022 Device Research Conference, DRC 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 Device Research Conference, DRC 2022

Y2 - 26 June 2022 through 29 June 2022

ER -

Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates

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