@inproceedings{ffdbc9218de84fe6a929d55f57f6240c,
title = "Demonstration of Mos2 Memtransistor with Poly-Si Source/Drain Featuring Tunable Conductance States and Boosted ION",
abstract = "Memtransistor, a hybrid transistor and memristor, features both semi-conductive and resistive switching properties. We demonstrate that the resistive property in both MoS2 crossbar memristor and planar memtransistor structures based on highly compatible CMOS process with heavily-doped poly-Si as bottom electrode (BE) and source/drain (S/D), respectively. Low-resistance/ high-resistance state current ratio (ILRS/IHRS) in memtransitors can be modified by both back gate and S/D electrodes, favoring operation of artificial neural networks. A boosted ION is found after the set process, exhibiting a new manner to acquire high-performance MoS2 devices. Our work presents a novel memtransistor concept based on 2D material device for memory and logic applications.",
keywords = "memtransistor, resistive switching, two-dimensional materials",
author = "Li, {K. S.} and Huang, {M. K.} and Wang, {Y. H.} and Tseng, {Y. C.} and Su, {C. J.}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",
year = "2023",
doi = "10.1109/EDTM55494.2023.10103051",
language = "English",
series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",
address = "United States",
}