Demonstration of Mos2 Memtransistor with Poly-Si Source/Drain Featuring Tunable Conductance States and Boosted ION

K. S. Li, M. K. Huang, Y. H. Wang, Y. C. Tseng*, C. J. Su*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Memtransistor, a hybrid transistor and memristor, features both semi-conductive and resistive switching properties. We demonstrate that the resistive property in both MoS2 crossbar memristor and planar memtransistor structures based on highly compatible CMOS process with heavily-doped poly-Si as bottom electrode (BE) and source/drain (S/D), respectively. Low-resistance/ high-resistance state current ratio (ILRS/IHRS) in memtransitors can be modified by both back gate and S/D electrodes, favoring operation of artificial neural networks. A boosted ION is found after the set process, exhibiting a new manner to acquire high-performance MoS2 devices. Our work presents a novel memtransistor concept based on 2D material device for memory and logic applications.

Original languageEnglish
Title of host publication7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publicationStrengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350332520
DOIs
StatePublished - 2023
Event7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
Duration: 7 Mar 202310 Mar 2023

Publication series

Name7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/TerritoryKorea, Republic of
CitySeoul
Period7/03/2310/03/23

Keywords

  • memtransistor
  • resistive switching
  • two-dimensional materials

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