Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

Sao Thien Ngo, Chan Hung Lu, Fu Gow Tarntair, Sheng Ti Chung, Tian-Li Wu*, Ray Hua Horng*

*Corresponding author for this work

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