Demonstration of Lowerature Fine-Pitch Cu/SiO2Hybrid Bonding by Au Passivation

Demin Liu, Po Chih Chen, Tzu Chieh Chou, Han Wen Hu, Kuan Neng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Fine pitch Cu/SiO22 hybrid bonding has been successfully demonstrated at a low temperature of 120 °C, a breakthrough, using Au passivation method in this work. To explore the bonding mechanism of passivation structures for hybrid bonding in details, Cu-Cu direct bonding with Au passivation on both wafer-level and chip-level has been discussed, including analyses of AFM, SAT, TEM, electrical measurements, and reliability test. Cu/SiO22 hybrid bonding with the fine pitch structure with stable electrical performance can be achieved at low bonding temperature under an atmospheric environment. Accordingly, this Au passivation scheme for Cu/SiO22 hybrid bonding with excellent bonding quality, low thermal budget, and high reliability shows a great feasibility for the 3D IC and heterogenous integration applications.

Original languageEnglish
Pages (from-to)868-875
Number of pages8
JournalIEEE Journal of the Electron Devices Society
Volume9
DOIs
StatePublished - Sep 2021

Keywords

  • 3D integration
  • Au passivation
  • Cu bonding
  • flip-chip bonding
  • wafer-level bonding

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