@inproceedings{6eef43b3217141dca0b2338a627478df,
title = "Demonstration of Low EOT Gate Stack and Record Transconductance on L{rm{g}}=90 nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 Superlattice",
abstract = "We report significantly enhanced gate capacitance (C{\text{gg}}) in 1.8-nm HfO2-ZrO2 superlattice (HZH) gate stack on n-MOSFETs, enabled by the ferroic nature of the constituent layers. The HZH gate stack exhibits co-existence of both ferroelectric and antiferroelectric phases, a unique mixed order, that has never been reported for films with such a low thickness [1]. Gate stacks combining this superlattice with an un-scavenged SiO2 interlayer (IL) (8 {\AA}), show a combined effective oxide thickness (EOT) of 7.5 {\AA} on both bulk and SOI n-MOSFETs. This represents over 2-{\AA} lowering of the EOT compared to Hf02 control produced using identical process conditions. Importantly, the enhanced C{\text{gg}} shows no frequency dispersion up to 25 GHz. Since no IL scavenging is employed, the electron mobility and injection velocity are unaffected. Aided by a lower EOT, a record-high intrinsic transconductance of 1.5 \text{mS}/\mu rm{m} is demonstrated in 90-nm SOI n-MOSFETs with the HZH gate stack, together with a 14% increase in ON-current relative to the Hf02 control.",
author = "W. Li and Wang, {L. C.} and Cheema, {S. S.} and N. Shanker and Park, {J. H.} and Liao, {Y. H.} and Hsu, {S. L.} and Hsu, {C. H.} and S. Volkman and U. Sikder and Tan, {A. J.} and Bae, {J. H.} and C. Hu and S. Salahuddin",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/IEDM19574.2021.9720658",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "13.6.1--13.6.4",
booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",
address = "United States",
}