Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

Jing Hua Hsuen; Maximillian Lederer; Lars Kerkhofs; Yannick Raffel; Luca Pirro; Talha Chohan; Konrad Seidel; Thomas Kampfe; Sourav De; Tian Li Wu

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

Jing Hua Hsuen, Maximillian Lederer^*, Lars Kerkhofs, Yannick Raffel, Luca Pirro, Talha Chohan, Konrad Seidel, Thomas Kampfe, Sourav De, Tian Li Wu^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.

Original language	English
Title of host publication	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504
State	Published - 2023
Event	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan Duration: 17 Apr 2023 → 20 Apr 2023

Publication series

Name	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Country/Territory	Taiwan
City	Hsinchu
Period	17/04/23 → 20/04/23

Access to Document

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

Cite this

Hsuen, J. H., Lederer, M., Kerkhofs, L., Raffel, Y., Pirro, L., Chohan, T., Seidel, K., Kampfe, T., De, S., & Wu, T. L. (2023). Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

Hsuen, Jing Hua ; Lederer, Maximillian ; Kerkhofs, Lars et al. / Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

@inproceedings{66620964709f46daba97af2f6ab9cb77,

title = "Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention",

abstract = "This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.",

author = "Hsuen, {Jing Hua} and Maximillian Lederer and Lars Kerkhofs and Yannick Raffel and Luca Pirro and Talha Chohan and Konrad Seidel and Thomas Kampfe and Sourav De and Wu, {Tian Li}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",

year = "2023",

doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504",

language = "English",

series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

address = "美國",

}

Hsuen, JH, Lederer, M, Kerkhofs, L, Raffel, Y, Pirro, L, Chohan, T, Seidel, K, Kampfe, T, De, S & Wu, TL 2023, Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. in 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, Taiwan, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. / Hsuen, Jing Hua; Lederer, Maximillian; Kerkhofs, Lars et al.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

AU - Hsuen, Jing Hua

AU - Lederer, Maximillian

AU - Kerkhofs, Lars

AU - Raffel, Yannick

AU - Pirro, Luca

AU - Chohan, Talha

AU - Seidel, Konrad

AU - Kampfe, Thomas

AU - De, Sourav

AU - Wu, Tian Li

PY - 2023

Y1 - 2023

N2 - This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.

AB - This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.

UR - http://www.scopus.com/inward/record.url?scp=85162950223&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

DO - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

M3 - Conference contribution

AN - SCOPUS:85162950223

T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023

Y2 - 17 April 2023 through 20 April 2023

ER -

Hsuen JH, Lederer M, Kerkhofs L, Raffel Y, Pirro L, Chohan T et al. Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504